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PDF IRFF430 Data sheet ( Hoja de datos )

Número de pieza IRFF430
Descripción 2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! IRFF430 Hoja de datos, Descripción, Manual

Data Sheet
IRFF430
March 1999 File Number 1894.4
2.75A, 500V, 1.500 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17415.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF430
TO-205AF
IRFF430
NOTE: When ordering, include the entire part number.
Features
• 2.75A, 500V
• rDS(ON) = 1.500
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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IRFF430 pdf
IRFF430
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
2000
1600
1200
800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400 COSS
CRSS
0
1
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
80µs PULSE TEST
4 TJ = -55oC
3
2
TJ = 25oC
TJ = 125oC
1
0
0 123 45
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
80µs PULSE TEST
10
TJ = 150oC
TJ = 25oC
TJ = 150oC
TJ = 25oC
1
0123
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
4
20
ID = 2.75A
15
10
VDS = 400V
VDS = 250V
VDS = 100V
5
0
0 8 16 24 32 40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5

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