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PDF IRFF310 Datasheet ( Hoja de datos )

Número de pieza IRFF310
Descripción HEXFET TRANSISTORS
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo

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IRFF310 Hoja de datos, Descripción, Manual
PD-90425D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF310
400V 3.6
ID
1.25A
IRFF310
JANTX2N6786
JANTXV2N6786
REF:MIL-PRF-19500/556
400V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.25
0.80
A
5.5
15 W
0.12
W/°C
±20 V
0.82
mJ
1.25
A
1.5 mJ
4.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
05/15/15

1 page

IRFF310 pdf
Fig9. MaximumDrainCurrentVs.
CaseTemperature
IRFF310, JANTX2N6786
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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