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Número de pieza | IRFF210 | |
Descripción | 2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFF210 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRFF210
March 1999 File Number 1887.3
2.2A, 200V, 1.500 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17442.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF210
TO-205AF
IRFF210
NOTE: When ordering, include the entire part number.
Features
• 2.2A, 200V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page IRFF210
Typical Performance Curves (Continued)
1.25
1.15
ID = 250µA
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS
COSS
=
≈
CGD
CDS
+
CGD
300
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
100
0
0
CISS
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
80µs PULSE TEST
3.6
3.2
2.8
2.4
2.0 TJ = -55oC
1.6 TJ = 25oC
1.2 TJ = 125oC
0.8
0.4
0
0 1 23 4
ID, DRAIN CURRENT (A)
5
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10
TJ = 150oC
TJ = 25oC
1
0.1
0
123 4
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
5
20
ID = 2.2A
15
10
VDS = 40V
VDS = 100V
VDS = 160V
5
0
0 2 4 6 8 10
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFF210.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFF210 | 2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
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IRFF212 | Trans MOSFET N-CH 200V 7.5A 3-Pin TO-39 | New Jersey Semiconductor |
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