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PDF IRFF110 Data sheet ( Hoja de datos )
| Número de pieza | IRFF110 | |
| Descripción | 3.5A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRFF110
March 1999 File Number 1562.3
3.5A, 100V, 0.600 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF110
TO-205AF
IRFF110
NOTE: When ordering, use the entire part number.
Features
• 3.5A, 100V
• rDS(ON) = 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFF110
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
500
400
1.05 300
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
100
0
1
CISS
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
VDS > ID(ON) x rDS(ON)MAX
80µs PULSE TEST
3.2
2.4 -55oC
25oC
1.6
125oC
0.8
0
0 1.6 3.2 4.8 6.4 8.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10
150oC
25oC
1.0
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 3.5A
15
10
VDS = 50V
VDS = 20V
VDS = 80V
5
0
0 2 4 6 8 10
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFF110.PDF ] | |
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