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PDF IRFD9110 Data sheet ( Hoja de datos )
| Número de pieza | IRFD9110 | |
| Descripción | 0.7A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRFD9110
July 1999 File Number 2215.3
0.7A, 100V, 1.200 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9110
HEXDIP
IRFD9110
NOTE: When ordering, use the entire part number.
Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-39
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFD9110
Typical Performance Curves Unless Otherwise Specified (Continued)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = -55oC
2.0 TJ = 25oC
TJ = 125oC
1.5
1.0
0.5
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-10
TJ = 150oC
-1.0 TJ = 25oC
0
0 -1.2 -2.4 -3.6 -4.8 -6.0
ID, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
-0.1
-0.4
-0.6 -0.8
-1.0 -1.2 -1.4
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
5
ID = -0.7A
0
-5
-10 VDS = -20V
VDS = -50V
-15 VDS = -80V
-20
0
2468
Qg(TOT), TOTAL GATE CHARGE (nC)
10
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
L
DUT
-
VDD
+
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
4-43
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFD9110.PDF ] | |
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