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PDF IRFD220 Data sheet ( Hoja de datos )
| Número de pieza | IRFD220 | |
| Descripción | 0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
January 2002
IRFD220
0.8A, 200V, 0.800 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09600.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD220
HEXDIP
IRFD220
NOTE: When ordering, use the entire part number.
Features
• 0.8A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFD220 Rev. B
1 page  
IRFD220
Typical Performance Curves Unless Otherwise Specified (Continued)
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
3
2
TJ = -55oC
TJ = 25oC
TJ = 125oC
10
TJ = 150oC
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
1
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
123
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 0.8A
15 VDS = 40V
VDS = 100V
VDS = 160V
10
5
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
IRFD220 Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFD220.PDF ] | |
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