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PDF IRFD110 Data sheet ( Hoja de datos )
| Número de pieza | IRFD110 | |
| Descripción | 1A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFD110 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Data Sheet
IRFD110
July 1999 File Number 2314.3
1A, 100V, 0.600 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD110
HEXDIP
IRFD110
NOTE: When ordering, use the entire part number.
Features
• 1A, 100V
• rDS(ON) = 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
www.DataSheet4U.com
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-269
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFD110
Typical Performance Curves Unless Otherwise Specified (Continued)
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2 TJ = -55oC
TJ = 25oC
2.4 TJ = 125oC
1.5
0.8
0
01 2 345
ID, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
5
2
TJ = 150oC
1.0
TJ = 25oC
5
2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 1A
15
10
VDS = 20V
VDS = 50V
VDS = 80V
5
0
0 2 4 6 8 10
QG, GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
4-273
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFD110.PDF ] | |
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