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Número de pieza | IRFBC40 | |
Descripción | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs | |
Fabricantes | Harris Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFBC40 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Semiconductor
January 1998
Features
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFBC40
TO-220AB
IRFBC40
IRFBC42
TO-220AB
IRFBC42
NOTE: When ordering, include the entire part number.
IRFBC40,
IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17426.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 2157.2
1 page IRFBC40, IRFBC42
Typical Performance Curves Unless Otherwise Specified (Continued)
102
10
TJ = 150oC
TJ = 25oC
1
5.0
80µs PULSE TEST
4.0
3.0
2.0
1.0
VGS = 10V
VGS = 20V
0.1
0 0.3 0.6 0.9 1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE
1.5
0
0
6
12 18
24 30
ID, DRAIN CURRENT (A)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
ID = 3.4A
VGS = 10V
2.4
1.25
ID = 250µA
1.15
1.8 1.05
1.2 0.95
0.6 0.85
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1800
CISS
1200
600
0
0
COSS
CRSS
2
5 10 20
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VDS ≥ 100V
80µs PULSE TEST
8
6
4
TJ = 25oC
TJ = 150oC
2
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT
5-5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFBC40.PDF ] |
Número de pieza | Descripción | Fabricantes |
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