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PDF IRFBC40 Data sheet ( Hoja de datos )

Número de pieza IRFBC40
Descripción 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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Data Sheet
IRFBC40
July 1999 File Number 2157.3
6.2A, 600V, 1.200 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17426.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFBC40
TO-220AB
IRFBC40
NOTE: When ordering, include the entire part number.
Features
• 6.2A, 600V
• rDS(ON) = 1.200
• Single Pulse Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-263
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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IRFBC40 pdf
IRFBC40
Typical Performance Curves Unless Otherwise Specified (Continued)
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4 ID = 3.4A, VGS = 10V
1.25
ID = 250µA
1.15
1.8 1.05
1.2 0.95
0.6 0.85
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
1800
CISS
1200
600
0
0
COSS
CRSS
2
5 10 20
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS 100V
8
6
4
TJ = 25oC
TJ = 150oC
2
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT
20
ID = 6.2A
16
12
8
4
VDS = 120V
VDS = 240V
VDS = 360V
0
0 12 24 36 48 60
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-267

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