DataSheet.es    


PDF IRFBC40 Data sheet ( Hoja de datos )

Número de pieza IRFBC40
Descripción N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



Hay una vista previa y un enlace de descarga de IRFBC40 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IRFBC40 Hoja de datos, Descripción, Manual

® IRFBC40
N - CHANNEL 600V - 1.0 - 6.2 A - TO-220
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
IRFBC40
600 V
< 1.2
6.2 A
s TYPICAL RDS(on) = 1.0
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
600
600
± 20
2
3.9
25
125
1.0
3
-65 to 150
150
(1) ISD 6.2 A, di/dt 80 A/µs, VDD V(BR)DSS, Tj TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
August 1998
1/8

1 page




IRFBC40 pdf
Normalized Gate Threshold Voltage vs
Temperature
IRFBC40
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IRFBC40.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRFBC40N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFETSTMicroelectronics
STMicroelectronics
IRFBC406.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFETIntersil Corporation
Intersil Corporation
IRFBC406.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETsHarris Corporation
Harris Corporation
IRFBC40Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A)International Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar