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PDF IRFBC30S Data sheet ( Hoja de datos )

Número de pieza IRFBC30S
Descripción Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFBC30S Hoja de datos, Descripción, Manual

PRELIMINARY
l Surface Mount (IRFBC30S)
l Low-profile through-hole (IRFBC30L)
l Available in Tape & Reel (IRFBC30S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
PD - 9.1015
IRFBC30S/L
HEXFET® Power MOSFET
D VDSS = 600V
RDS(on) = 2.2
ID = 3.6A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBC30L) is available for low-profile applications.
D 2 Pak
T O -262
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Max.
3.6
2.3
14
3.1
74
0.59
± 20
290
3.6
7.4
3.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.7
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
7/22/97

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IRFBC30S pdf
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