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PDF IRFBC30 Data sheet ( Hoja de datos )
| Número de pieza | IRFBC30 | |
| Descripción | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFBC30 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220
PowerMESH™ ΙΙ MOSFET
TYPE
VDSS
RDS(on)
ID
IRFBC30
600 V < 2.2 Ω
3.6 A
s TYPICAL RDS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ ΙΙ is the evolution of the first
generation of MESH OVERLAY™ . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
600
600
± 20
3.6
2.3
14
75
0.6
3
-65 to 150
150
( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
January 2000
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
IRFBC30
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFBC30.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET | STMicroelectronics |
| IRFBC30 | Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A) |  International Rectifier |
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