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PDF IRFBA22N50 Data sheet ( Hoja de datos )

Número de pieza IRFBA22N50
Descripción Power MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFBA22N50 Hoja de datos, Descripción, Manual

PD-91866B
SMPS MOSFET
IRFBA22N50A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptible Power Supply
l High Speed Power Switching
VDSS
500V
RDS(on) max
0.23
ID
24A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN1001)
Super-220™
(TO-273AA)
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
24
15
96
340
2.7
± 30
3.4
-55 to + 150
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
°C
N
Applicable Off Line SMPS Topologies:
l Full Bridge Converters
l Power Factor Correction Boost
Notes  through … are on page 8
www.irf.com
1
12/12/00

1 page




IRFBA22N50 pdf
25
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFBA22N50A
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
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