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PDF IRFB52N15D Data sheet ( Hoja de datos )

Número de pieza IRFB52N15D
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFB52N15D Hoja de datos, Descripción, Manual

PD - 94357A
SMPS MOSFET
IRFB52N15D
IRFS52N15D
IRFSL52N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.032
ID
60A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB52N15D
D2Pak
TO-262
IRFS52N15D IRFSL52N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Notes  through ‡ are on page 11
www.irf.com
Max.
60
43
240
3.8
320
2.1
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
0.50
–––
–––
Max.
0.47
–––
62
40
Units
°C/W
1
06/25/02

1 page




IRFB52N15D pdf
IRFB/IRFS/IRFSL52N15D
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
175
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D =
t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5

5 Page





IRFB52N15D arduino
IRFB/IRFS/IRFSL52N15D
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
TRL
10.90 (.429)
10.70 (.421)
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
330.00
(14.173)
MAX.
6 0.0 0 (2.36 2)
M IN .
Notes:
NO TES :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.72mH
RG = 25, IAS = 36A.
ƒ ISD 36A, di/dt 400A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† This is only applied to TO-220AB package.
‡ This is applied to D2Pak, when mounted on 1" square PCB
(FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
TO-220 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRFB52N15D),
& Industrial (IRFS/SL52N15D) market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/02
www.irf.com
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