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PDF IRFAC42 Data sheet ( Hoja de datos )

Número de pieza IRFAC42
Descripción 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! IRFAC42 Hoja de datos, Descripción, Manual

Semiconductor
January 1998
• 6.2A and 5.4A, 600V
• rDS(ON) = 1.2and 1.6
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFAC40
TO-204AA
IRFAC40
IRFAC42
TO-204AA
IRFAC42
NOTE: When ordering, include the entire part number.
IRFAC40,
IRFAC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental Type TA17426.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 2156.2

1 page




IRFAC42 pdf
IRFAC40, IRFAC42
Typical Performance Curves Unless Otherwise Specified (Continued)
10
80µs PULSE TEST
8
6
4
VGS =10V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
2 VGS = 4.5V
VGS = 4.0V
0
0 3 6 9 12 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
VDS 100V
80µs PULSE TEST
1
0.1 TJ = 150oC
TJ = 25oC
0.01 0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
5
80µs PULSE TEST
4
3
2
VGS = 10V
VGS = 20V
3.0
ID = 3.4A
VGS = 10V
2.4
1.8
1.2
1 0.6
0
0
6
12 18
24
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
0
30 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
3000
2400
1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1200
COSS
600
CRSS
0 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5

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