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PDF IRF9953 Data sheet ( Hoja de datos )
| Número de pieza | IRF9953 | |
| Descripción | Power MOSFET(Vdss=-30V/ Rds(on)=0.25ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF9953 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PD - 9.1560A
PRELIMINARY
IRF9953
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
T op V iew
VDSS = -30V
RDS(on) = 0.25Ω
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
VDS
VGS
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
-30
± 20
-2.3
-1.8
-10
1.6
2.0
1.3
57
-1.3
0.20
-5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
RθJA
Limit
62.5
Units
°C/W
8/25/97
1 page  
IRF9953
400
V GS = 0V ,
f = 1MHz
C iss = Cgs + C g d , Cds S H OR TED
C rss = Cg d
C oss = Cds + C gd
300
C iss
C oss
200
Crs s
100
0A
1 10 100
-VD S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -2.3A
16
VDS =-10V
12
8
4
0
0 2 4 6 8 10
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
P DM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJA + T A
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9953.PDF ] | |
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