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PDF IRF9520 Data sheet ( Hoja de datos )
| Número de pieza | IRF9520 | |
| Descripción | 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF9520
July 1999 File Number 2281.3
6A, 100V, 0.600 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9520
TO-220AB
IRF9520
NOTE: When ordering, use the entire part number.
Features
• 6A, 100V
• rDS(ON) = 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9520
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
500
400
CISS
300
200 COSS
100 CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0 0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
2
1
TJ = -55oC
TJ = 25oC
TJ = 125oC
-100
-10
TJ = 150oC
-1.0 TJ = 25oC
0
0 -2 -4 -6 -8 -10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
-0.1
-0.4
-0.6 -0.8
-1.0 -1.2 -1.4
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -6A
-5
VDS = -80V
-10 VDS = -50V
VDS = -20V
0 4 8 12 16 20
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9520.PDF ] | |
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