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PDF IRF9510 Data sheet ( Hoja de datos )
| Número de pieza | IRF9510 | |
| Descripción | 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF9510
July 1999 File Number 2214.4
[ /Title
(IRF95
10)
/Sub-
ject (-
3.0A, -
100V,
1.200
Ohm,
P-Chan-
nel
Power
MOS-
FET)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
P-Chan-
nel
Power
MOS-
FET,
TO-
220AB
)
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9510
TO-220AB
IRF9510
NOTE: When ordering, include the entire part number.
Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
[
5-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9510
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
400 COSS ≈ CDS + CGD
300
CISS
200
100
00
COSS
CRSS
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.5
TJ = -55oC
2.0 TJ = 25oC
TJ = 125oC
1.5
1.0
0.5
0
0
VDS > ID(ON) x RDS(ON) MAX.
80µs PULSE TEST
-1.2 -2.4 -3.6
ID, DRAIN CURRENT (A)
-4.8
-6.0
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-102
-10
TJ = 150oC
TJ = 25oC
-1
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -4A
-5
VDS = -20V
-10
VDS = -50V
VDS = -80V
-15
0 2 4 6 8 10
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9510.PDF ] | |
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