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PDF IRF9230 Data sheet ( Hoja de datos )
| Número de pieza | IRF9230 | |
| Descripción | P-CHANNNEL TRANSISTORS | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRF9230 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PD-90548D
IRF9230
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
JANTX2N6806
JANTXV2N6806
THRU-HOLE -TO-204AE (TO-3)
REF:MIL-PRF-19500/562
200V, P-CHANNNEL
Product Summary
Part Number BVDSS
IRF9230 -200V
RDS(on)
0.80 Ω
ID
-6.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance;
superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n RepetitiveAvalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-6.5
-4.0 A
-26
75 W
0.60
W/°C
±20 V
181 mJ
-6.5 A
7.5 mJ
-5.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
09/28/15
1 page  
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF9230
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9230.PDF ] | |
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