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PDF IRF9150 Data sheet ( Hoja de datos )
| Número de pieza | IRF9150 | |
| Descripción | -25A/ -100V/ 0.150 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF9150
February 1999 File Number 2280.3
-25A, -100V, 0.150 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA49230.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9150
TO-204AE
IRF9150
NOTE: When ordering, use the entire part number.
Features
• -25A, -100V
• rDS(ON) = 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
5-20
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9150
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5000
4000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
3000
2000
1000
00
CISS
COSS
CRSS
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
12
25oC
9
150oC
6
3
0
0 -10 -20 -30 -40 -50
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
10
150oC
1
25oC
0.1
0.3
0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.7
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -25A
-5
-10
-15 VDS = -80V
VDS = -50V
VDS = -20V
-20
-25
0
20 40 60 80 100 120 140 160 180 200
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-24
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9150.PDF ] | |
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