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PDF IRF9130 Data sheet ( Hoja de datos )
| Número de pieza | IRF9130 | |
| Descripción | -12A/ -100V/ 0.30 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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 1. - 100V, 11A, P-Channel MOSFET  Hay una vista previa y un enlace de descarga de IRF9130 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRF9130
February 1999 File Number 2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power
MOSFET
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9130
TO-204AA
IRF9130
NOTE: When ordering, use the entire part number.
Features
• -12A, -100V
• rDS(ON) = 0.30Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
5-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9130
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
400
COSS
200
0
0
CRSS
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
TJ = -55oC
TJ = 25oC
4
TJ = 125oC
3
PULSE DURATION = 80µs
2
1
0 -4 -8 -12 -16 -20
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
TJ = 150oC
-10
-1.0 TJ = 25oC
-0.1
-0.4
-0.6 -0.8
-1.0 -1.2 -1.4
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = 15A
-5
VDS = -80V
VDS = -50V
-10
VDS = -20V
-15
0
8 16 24 32
Qg(TOT), TOTAL GATE CHARGE (nC)
40
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-12
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF9130.PDF ] | |
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