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PDF IRF8915 Data sheet ( Hoja de datos )
| Número de pieza | IRF8915 | |
| Descripción | HEXFETPower MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
VDSS
20V
PD - 95858
IRF8915
HEXFET® Power MOSFET
RDS(on) max
ID
:18.3m @VGS = 10V 8.9A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Max.
20
± 20
8.9
7.1
71
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
Notes through
are on page 10
www.irf.com
1
03/31/04
1 page  
IRF8915
9
8
7
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
3.0
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
3.68799
2.18971
τi (sec)
0.000349
0.005246
τ3 τ3
τ4 τ4
34.7298 0.470610
21.8971 13.52000
P DM
t1
Notes:
1. Duty factor D =
t 1/ t 2
2. Peak T J = P DM x Z thJA
+T A
t2
1E-005
0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF8915.PDF ] | |
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