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PDF IRF840LCL Data sheet ( Hoja de datos )
| Número de pieza | IRF840LCL | |
| Descripción | Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF840LCL (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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l Ultra Low Gate Charge
l Reduced Gate Drive Requirement
l Enhanced 30V VGS Rating
l Reduced CISS, COSS, CRSS
l Extremely High Frequency Operation
l Repetitive Avalanche Rated
Description
This new series of low charge HEXFET® power MOSFETs
achieve significant lower gate charge over conventional
MOSFETs. Utilizing the new LCDMOS (low charge
device MOSFETs) technology, the device improvements
are achieved without added product cost, allowing for
reduce gate drive requirements and total system savings.
In addition, reduced switching losses and improved
efficiency and achievable in a variety of high frequency
applications. Frequencies of a few MHz at high current
are possible using the new low charge MOSFETs.
G
These device improvements combined with the proven
ruggedness and reliability that characterize of HEXFET
power MOSFETs offer the designer a new power
transistor standard for switching applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
PD- 93766
IRF840LCS
IRF840LCL
HEXFET® Power MOSFET
D
VDSS = 500V
RDS(on) = 0.85Ω
ID = 8.0A
S
D2Pak
IRF840LCS
TO-262
IRF840LCL
Max.
8.0
5.1
28
3.1
125
1.0
± 30
510
8.0
13
3.5
-55 to + 150
300 (1.6mm from case)
Typ.
–––
–––
Max.
1.0
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
1/3/2000
1 page  
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF840LCS/LCL
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF840LCL.PDF ] | |
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