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PDF IRF840 Data sheet ( Hoja de datos )

Número de pieza IRF840
Descripción 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo

IRF840 datasheet


1. Power MOSFET, TO-220AB - Vishay






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Data Sheet
IRF840
July 1999 File Number 2312.3
8A, 500V, 0.850 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17425.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF840
TO-220AB
IRF840
NOTE: When ordering, include the entire part number.
Features
• 8A, 500V
• rDS(ON) = 0.850
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-257
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




IRF840 pdf
IRF840
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
3000
2400
1.05
1800
0.95
1200
0.85
600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS
COSS
=
CGD
CDS
+
CGD
CISS
CRSS
COSS
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0
12
5 10 2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS 50V
12
9
6
3
TJ = 25oC
TJ = 150oC
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
1.0
TJ = 25oC
0
0 3 6 9 12 15
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
0.3 0.6 0.9 1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 8A
16
12
8
VDS = 100V
VDS = 250V
VDS = 400V
4
0
0 12 24 36 48 60
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-261

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