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PDF IRF840 Data sheet ( Hoja de datos )
| Número de pieza | IRF840 | |
| Descripción | 8A, 500V, N-Channel MOSFET, Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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 1. Power MOSFET, TO-220AB - Vishay  Hay una vista previa y un enlace de descarga de IRF840 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Philips Semiconductors
PowerMOS transistor
Avalanche energy rated
Product specification
IRF840
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 8.5 A
RDS(ON) ≤ 0.85 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The IRF840 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 7.4 A;
tp = 0.22 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 8.5 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
531
13
8.5
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
March 1999
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Avalanche energy rated
Product specification
IRF840
Gate-source voltage, VGS (V)
15
14 ID = 8.5A
13
12
Tj = 25 C
11
10 100V
9
8
7
6
5
4
3
2
1
0
200V
PHP8N50E
VDD = 400 V
0 20 40 60 80
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Switching times (ns)
1000
VDD = 250 V
VGS = 10 V
RD = 30 Ohms
Tj = 25 C
PHP8N50
100 td(off)
tf
tr
td(on)
10
0 10 20 30 40 50 60
RG, Gate resistance (Ohms)
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50 0 50 100
Tj, Junction temperature (C)
150
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
20 IF, Source-Drain diode current (Amps)
VGS = 0 V
15
PHP8N50
10
150 C
Tj = 25 C
5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSDS, Source-Drain voltage (Volts)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Non-repetitive Avalanche current, IAS (A)
10
25 C
Tj prior to avalanche = 125 C
1
VDS
ID
0.1
1E-06
tp
PHP8N50E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
10
Tj prior to avalanche = 25 C
1 125 C
0.1
0.01
1E-06
PHP8N50E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
March 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF840.PDF ] | |
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