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PDF IRF830AL Data sheet ( Hoja de datos )
| Número de pieza | IRF830AL | |
| Descripción | Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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SMPS MOSFET
PD- 92006A
IRF830AS/L
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High Speed Power Switching
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max
1.40Ω
ID
5.0A
Benefits
l Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified (See AN 1001)
D2Pak
TO-262
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
5.0
3.2
20
3.1
74
0.59
± 30
5.3
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Two Transistor Forward
l Half Bridge and Full Bridge
Notes through
are on page 10
www.irf.com
1
5/4/00
1 page  
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF830AS/L
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF830AL.PDF ] | |
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