|
|
Número de pieza | IRF820 | |
Descripción | 2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF820 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRF820
July 1999 File Number 1581.4
2.5A, 500V, 3.000 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17405.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF820
TO-220AB
IRF820
NOTE: When ordering, use the entire part number.
Features
• 2.5A, 500V
• rDS(ON) = 3.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-245
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page IRF820
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
600
400
200
0
1
CISS
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2
2.4
1.6
TJ = 25oC
TJ = 150oC
0.8
0
0 0.8 1.6 2.4 3.2 4.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
1
TJ = 25oC
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 2.5A
16
12
8
IRF820, IRF822
VDS = 400V
VDS = 250V
VDS = 100V
4
0 0 4 8 12 16 20
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-249
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF820.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF820 | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRF820 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS | Motorola Inc |
IRF820 | N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET | STMicroelectronics |
IRF820 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |