DataSheet.es    


PDF IRF8010 Data sheet ( Hoja de datos )

Número de pieza IRF8010
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRF8010 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IRF8010 Hoja de datos, Descripción, Manual

PD - 94497
SMPS MOSFET
IRF8010
Applications
High frequency DC-DC converters
UPS and Motor Control
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Typical RDS(on) = 12m
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
15m
ID
80A
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
TJ
TSTG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
Max.
80
57
320
260
1.8
± 20
16
-55 to + 175
300 (1.6mm from case )
1.1(10)
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Typ.
–––
0.50
–––
Max.
0.57
–––
62
Units
°C/W
Notes through
www.irf.com
are on page 8
1
08/23/02

1 page




IRF8010 pdf
80
LIMITED BY PACKAGE
60
40
20
0
25 50 75 100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF8010
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IRF8010.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF8010HEXFET Power MOSFETInternational Rectifier
International Rectifier
IRF8010LSMPS MOSFETInternational Rectifier
International Rectifier
IRF8010LPBFHEXFET Power MOSFETInternational Rectifier
International Rectifier
IRF8010PBFHEXFET Power MOSFETInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar