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PDF IRF7901D1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7901D1 | |
| Descripción | Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 93844B
IRF7901D1
• Co-Pack Dual N-channel HEXFET® Power MOSFET
and Schottky Diode
Dual FETKY™
• Ideal for Synchronous Buck DC-DC
Co-Packaged Dual MOSFET Plus Schottky Diode
Converters Up to 5A Peak Output
• Low Conduction Losses
• Low Switching Losses
Device Ratings (Max.Values)
• Low Vf Schottky Rectifier
Q1 Q2
SO-8
Q1
S ource
Q1
Gate
1
2
PGND 3
Q2
Gate
4
8
Pwr
Vin
7
Pwr
Vin
6
Pwr
Vout
5
Pwr
Vout
T op View
VDS
RDS(on)
QG
Qsw
VSD
and Schottky
30V 30V
38 mΩ
32 mΩ
10.5 nC 18.3 nC
3.8 nC 9.0 nC
1.0V
0.52V
Description
The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFET®MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple
die capability making it ideal in a variety of power applications. With these improvements, multiple devices can
be used in an application with dramatically reduced board space. Internal connections enable easier board
layout design with reduced stray inductance.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Output
Current
(V
GS
≥
4.5V)
Pulsed Drain Current
T = 100°C
L
Power Dissipation
TL = 100°C
Junction & Storage Temperature Range
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
V
GS
I
D
IDM
PD
TJ, TSTG
I
SM
RθJA
RθJL
IRF7901D1
30
±20
6.2
24
2.0
–55 to 150
12
Max.
62.5
25
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
9/19/01
1 page  
Q1 - Control FET
6.0
ID= 5.0A
VDS = 16V
4.0
IRF7901D1
Typical Characteristics
Q2 - Synchronous FET & Schottky
6.0
ID= 5.0A
VDS = 16V
4.0
2.0 2.0
0.0
0.0 2.0 4.0 6.0 8.0
QG, Total Gate Charge (nC)
Figure 6. Gate-to-Source Voltage vs Typical Gate
Charge
0.05
0.04
ID = 5.0A
0.03
0.02
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Figure 8. Typical R (on) vs Gate-to-Source Voltage
DS
30
VGS
TOP
10V
8.0V
4.5V
3.5V
3.0V
2.5V
20 2.0V
BOTTOM 0.0V
10
0.0V
250µs PULSE WIDTH
0 Tj = 25°C
0.0 0.4 0.8 1.2 1.6 2.0
VSDDS, S,oDurracien--TtooS-oDruarcienVVollttaaggee((VV))
Figure 10. Typical Reverse Output Characteristics
www.irf.com
0.0
0 4 8 12 16
QG, Total Gate Charge (nC)
Figure 7. Gate-to-Source Voltage vs Typical Gate
Charge
0.030
0.025
0.020
0.015
ID = 5.0A
0.010
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Figure 9. Typical R (on) vs Gate-to-Source Voltage
DS
50
VGS
TOP
10V
8.0V
4.5V
40 3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
30
20
0.0V
10
250µs PULSE WIDTH
Tj = 25°C
0
0.0 0.4 0.8 1.2
VVSDD,SSo, uDrrcaein--Ttoo-SDoruaricneVVoollttaaggee((VV))
Figure 11. Typical Reverse Output Characteristics
5
5 Page | ||
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| PDF Descargar | [ Datasheet IRF7901D1.PDF ] | |
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