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PDF IRF7807V Data sheet ( Hoja de datos )
| Número de pieza | IRF7807V | |
| Descripción | N Channel Application Specific MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7807V (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
PD-94108
IRF7807V
SO-8
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
DEVICE CHARACTERISTICS
RDS(on)
Q
G
Qsw
Qoss
IRF7807V
17mΩ
9.5nC
3.4nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
TA = 70°C
Power Dissipation
T = 25°C
A
TA = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7807 V
30
±20
8.3
6.6
66
2.5
1.6
–55 to 150
2.5
66
Max.
50
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
3/1/01
1 page  
2.0 ID = 7.0A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
IRF7807V
5
ID = 7.0A
4
VDS = 16V
3
2
1
0
0 2 4 6 8 10 12
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.030
0.025
0.020
0.015
ID = 7.0A
0.010
2.0
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 7. On-Resistance Vs. Gate Voltage
www.irf.com
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 8. Typical Source-Drain Diode
Forward Voltage
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7807V.PDF ] | |
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