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PDF IRF7807D1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7807D1 | |
| Descripción | MOSFET / SCHOTTKY DIODE | |
| Fabricantes | International Rectifier | |
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PD- 93761
IRF7807D1
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
SO-8
A/S 1
8 K/D
A/S 2
7 K/D
A/S 3
6 K/D
G4
5 K/D
D
Top View
Description
The FETKY™ family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
25°C
70°C
25°C
70°C
VDS
VGS
ID
IDM
PD
Schottky and Body Diode
Average ForwardCurrent
25°C
70°C
IF (AV)
Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
www.irf.com
RθJA
Device Features (Max Values)
VDS
RDS(on)
Qg
Qsw
Qoss
IRF7807D1
30V
25mΩ
14nC
5.2nC
18.4nC
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.5
2.2
–55 to 150
Max.
50
Units
V
A
W
A
°C
Units
°C/W
1
11/8/99
1 page  
IRF7807D1
0.05 0.024
0.04 0.022
VGS = 4.5V
0.03 0.020
0.02
ID = 7.0A
0.018
VGS = 10V
0.01
2.0
4.0 6.0 8.0
VGS, Gate -to -Source Voltage (V)
10.0
0.016
0
20 40 60
I D , Drain Current (A)
80
Fig 9. On-Resistance Vs. Gate Voltage
Fig 10. On-Resistance Vs. Drain Current
100
D = 0.50
10 0.20
0.10
0.05
0.02
0.01
1
0.1
0.001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(HEXFET® MOSFET)
www.irf.com
100
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7807D1.PDF ] | |
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