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PDF IRF7604 Data sheet ( Hoja de datos )
| Número de pieza | IRF7604 | |
| Descripción | Power MOSFET(Vdss=-20V/ Rds(on)=0.09ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
S
S
S
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
PD - 9.1263E
IRF7604
HEXFET® Power MOSFET
A
1 8D
2 7D
3 6D
4 5D
Top View
VDSS = -20V
RDS(on) = 0.09Ω
M icro8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-3.6
-2.9
-19
1.8
14
± 12
-5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
70
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
Units
°C/W
12/9/97
1 page  
IRF7604
-4.5 V
QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
100
VDS
VGS
RG
D.U.T.
-4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7604.PDF ] | |
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