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PDF IRF7524D1 Data sheet ( Hoja de datos )

Número de pieza IRF7524D1
Descripción FETKY MOSFET & Schottky Diode(Vdss=-20V/ Rds(on)=0.27ohm/ Schottky Vf=0.39V)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD -91648C
PRELIMINARY
IRF7524D1
FETKYTM MOSFET & Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l Micro8TM Footprint
Description
A1
A2
8K
7K
VDSS = -20V
S3
6 D RDS(on) = 0.27
G4
5D
Schottky Vf = 0.39V
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current Œ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient 
Maximum
-1.7
-1.4
-14
1.25
0.8
10
± 12
-5.0
-55 to +150
Maximum
100
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD -1.2A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs – duty cycle 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
01/29/99

1 page




IRF7524D1 pdf
IRF7524D1
Power Mosfet Characteristics
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.0
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5 1.0 1.5
-ID , Drain Current (A)
2.0
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
0.300
0.250
0.200
ID = -1.7A
0.150
0.100
2
34567
-VGS , Gate-to-Source Voltage (V)
8
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5

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