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PDF IRF7523D1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7523D1 | |
| Descripción | FETKY MOSFET / Schottky Diode(Vdss=30V/ Rds(on)=0.11ohm/ Schottky Vf=0.39V) | |
| Fabricantes | International Rectifier | |
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PD- 91647C
IRF7523D1
FETKY™ MOSFET / Schottky Diode
q Co-packaged HEXFET® Power MOSFET
and Schottky Diode
A
q N-Channel HEXFET
A
q Low VF Schottky Rectifier
q Generation 5 Technology
S
q Micro8TM Footprint
G
1
2
3
4
8K
7K
6D
VDSS = 30V
RDS(on) = 0.11Ω
5 D Schottky Vf = 0.39V
Description
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS@10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Maximum
2.7
2.1
21
1.25
0.8
10
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
± 20
6.2
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient
Maximum
100
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
3/17/99
1 page  
IRF7523D1
Power Mosfet Characteristics
400
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds S HO RTE D
C rss = C gd
C oss = C ds + C gd
300 Ciss
Coss
200
20
ID = 1.7A
16
12
8
V DS = 24V
V DS = 15V
100 Crss
0A
1 10 100
V DS , Drain-to-Source Voltage (V)
4
FOR TEST CIRCUIT
SEE FIGURE 9
0A
0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7523D1.PDF ] | |
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