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PDF IRF7507 Data sheet ( Hoja de datos )
| Número de pieza | IRF7507 | |
| Descripción | Power MOSFET(Vdss=+-20V) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7507 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91269I
IRF7507
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
N-CHANNEL M OSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL M OSFET
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.135Ω 0.27Ω
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
N-Channel
P-Channel
20 -20
2.4 -1.7
1.9 -1.4
19 -14
1.25
0.8
10
± 12
16
5.0 -5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Max.
100
Units
°C/W
1
12/1/98
1 page  
1 0 0 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
10 - 2.0V
BOTTOM - 1.5V
1
P - Channel
1 0 0 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
10 - 2.0V
BOTTOM - 1.5V
1
IRF7507
0.1
0.01
0.1
-1.5V 20µs PULSE W IDTH
TJ = 25°C
A
1 10
-VDS , Drain-to-Source Voltage (V)
Fig 11. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
0.1
0.01
1.5
VDS = -10V
20µs PULS E W IDTH
2.0 2.5 3.0 3.5 4.0 4.5 5.0A
-VG S , G ate-to-Source V olta ge (V)
Fig 13. Typical Transfer Characteristics
2.0
ID = -1.2A
1.5
1.0
0.5
0.0
-60
-40 -20 0
V GS = -4.5V
A
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
www.irf.com
0.1 -1.5V
0.01
0.1
20µs PULSE W IDTH
TJ = 150°C
1
A
10
-VD S , D rain-to-Source V oltage (V)
Fig 12. Typical Output Characteristics
10
TJ = 150°C
1
0.1
TJ = 25°C
0.01
0.4
VGS = 0V A
0.6 0.8 1.0 1.2
-VSD , S ourc e-to-D rain V oltage (V )
Fig 14. Typical Source-Drain Diode
Forward Voltage
1.0
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5 1.0 1.5
-ID , Drain Current (A)
2.0
Fig 16. Typical On-Resistance Vs. Drain
Current
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7507.PDF ] | |
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