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PDF IRF7501 Data sheet ( Hoja de datos )
| Número de pieza | IRF7501 | |
| Descripción | Power MOSFET(Vdss=20V/ Rds(on)=0.135ohm) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7501 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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l Generation V Technology
l Ulrtra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
PRELIMINARY
PD - 91265H
IRF7501
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS =20V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.135Ω
Top V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGSM
VGS
dv/dt
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10µs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Max.
20
2.4
1.9
19
1.25
0.8
0.01
16
± 12
5.0
-55 to + 150
240 (1.6mm from case)
Max.
100
Units
V
A
W
W
W/°C
V
V
V/ns
°C
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
4/30/98
1 page  
IRF7501
500
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds S H O R TE D
C rss = C gd
400 C oss = Cds + C gd
C is s
300
Coss
200
Crss
100
0A
1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I D = 1.7A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0A
0 2 4 6 8 10
Q G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7501.PDF ] | |
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