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PDF IRF7490 Data sheet ( Hoja de datos )
| Número de pieza | IRF7490 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7490 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD - 94508
IRF7490
Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
S
S
S
l Fully Characterized Avalanche Voltage G
and Current
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
39mW@VGS=10V
Qg
37nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 9
www.irf.com
Max.
100
± 20
5.4
4.3
43
2.5
1.6
20
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
mW/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
9/23/02
1 page  
IRF7490
6
5
4
3
2
1
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7490.PDF ] | |
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