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PDF IRF7456 Data sheet ( Hoja de datos )

Número de pieza IRF7456
Descripción Power MOSFET(Vdss=20V/ Rds(on)max=0.0065ohm/ Id=16A)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7456 Hoja de datos, Descripción, Manual

PD- 93840B
SMPS MOSFET
IRF7456
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
0.0065
ID
16A
Benefits
l Ultra-Low RDS(on) at 4.5V VGS
S1
l Low Charge and Low Gate Impedance to
Reduce Switching Losses
S2
l Fully Characterized Avalanche Voltage
S3
and Current
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 12
16
13
130
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Max.
50
Units
°C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes  through „ are on page 8
www.irf.com
1
4/20/00

1 page




IRF7456 pdf
Fig 6. On-Resistance Vs. Drain Current
IRF7456
20
RD
VDS
15 VGS D.U.T.
RG +-VDD
10V
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.01
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
100
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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