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PDF IRF7380 Data sheet ( Hoja de datos )
| Número de pieza | IRF7380 | |
| Descripción | High frequency DC-DC converters | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
High frequency DC-DC converters
PD - 94420
IRF7380
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
80V 73mΩ@VGS = 10V 3.6A
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
S1
G1
S2
G2
18
27
36
45
Top View
D1
D1
D2
D2
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TA = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
dv/dt
TJ
TSTG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient (PCB Mount) *
Max.
80
± 20
3.6
2.9
29
2.0
0.02
2.3
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 8
www.irf.com
1
08/28/02
1 page  
IRF7380
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01 0.1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA + T A
1 10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7380.PDF ] | |
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