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PDF IRF737LC Data sheet ( Hoja de datos )
| Número de pieza | IRF737LC | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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HEXFET® Power MOSFET
PRELIMINARY
Reduced Gate Drive Requirement
Enhanced 30V VGS Rating
Reduced CISS, COSS, CRSS
Extremely High Frequency Operation
Repetitive Avalanche Rated
PD - 9.1314
IRF737LC
VDSS = 300V
RDS(on) = 0.75Ω
Description
This new series of Low Charge HEXFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristics of
HEXFETs offer the designer a new standard in power
transistors for switching applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
ID = 6.1A
Max.
6.1
3.9
24
74
0.59
±30
120
6.1
7.4
3.4
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
1.7
––––
62
Units
°C/W
1 page  
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC, Case Temperature (°C)
A
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRF737LC
RD
D.U.T.
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
Notes:
1. D uty fac tor D = t 1 / t 2
t1
t2
2. P eak TJ = P D M x Z thJC + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF737LC.PDF ] | |
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