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PDF IRF7353D1 Data sheet ( Hoja de datos )

Número de pieza IRF7353D1
Descripción FETKY MOSFET / Schottky Diode
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD- 91802A
IRF7353D1
FETKYMOSFET / Schottky Diode
q Co-packaged HEXFET® Power MOSFET
and Schottky Diode
A
1
8
q Ideal For Buck Regulator Applications
q N-Channel HEXFET
q Low VF Schottky Rectifier
q Generation 5 Technology
A2
S3
G4
7
6
5
q SO-8 Footprint
Description
Top View
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
K
K
D
D
VDSS = 30V
RDS(on) = 0.029
Schottky Vf = 0.39V
S O -8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current 
Pulsed Drain Current Œ
Power Dissipation 
Linear Derating Factor
6.5
5.2
52
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient …
Maximum
62.5
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
 Starting TJ = 25°C, L = 10mH, RG = 25, IAS = 4.0A
Ž ISD 4.0A, di/dt 74A/µs, VDD V(BR)DSS, TJ 150°C
 Pulse width 300µs; duty cycle 2%
… Surface mounted on FR-4 board, t 10sec.
www.irf.com
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
1
3/17/99

1 page




IRF7353D1 pdf
Power Mosfet Characteristics
IRF7353D1
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
100
www.irf.com
TJ = 150°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
5

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