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PDF IRF7350 Data sheet ( Hoja de datos )
| Número de pieza | IRF7350 | |
| Descripción | Power MOSFET(Vdss=+-100V) | |
| Fabricantes | International Rectifier | |
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PD - 94226B
IRF7350
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape and Reel
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1
VDSS 100V -100V
6 D2
G2 4
5 D2
P -C H AN N EL MO SFET
RDS(on) 0.21Ω 0.48Ω
Top View
Description
These dual N and P channel HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET® power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
EAS
VGS
dv/dt
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max.
N-Channel
P-Channel
100
2.1
1.7
8.4
2.0
0.016
35
± 20
4.0
-55 to + 150
-100
-1.5
-1.2
-6.0
51
± 20
4.3
Units
A
W
W/°C
mJ
V
V/ns
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
08/09/01
1 page  
N-CHANNEL
IRF7350
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100
TC , Case Temperature
125
( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA + T A
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page 
P-CHANNEL
IRF7350
2.0
1.6
1.2
0.8
0.4
0.0
25
50 75 100
TC , Case Temperature
125
( °C)
150
Fig 29. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA + T A
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10 100
Fig 30. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IRF7350.PDF ] | |
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