DataSheet.es    


PDF IRF7342 Data sheet ( Hoja de datos )

Número de pieza IRF7342
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRF7342 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! IRF7342 Hoja de datos, Descripción, Manual

PD -91859
IRF7342
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
S1 1
G1 2
8 D1
7 D1
VDSS = -55V
S2 3
6 D2
G2 4
5 D 2 RDS(on) = 0.105
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
S O -8
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient…
Typ.
–––
Max.
62.5
Units
°C/W
1
2/24/99

1 page




IRF7342 pdf
1200
960
720
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
480
240
0
1
Coss
Crss
10 100
--VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
IRF7342
20
ID = -3.1A
16
VDS = -48V
VDS = -30V
VDS = -12V
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet IRF7342.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF734Power MOSFET ( Transistor )Vishay
Vishay
IRF7341HEXFET Power MOSFETInternational Rectifier
International Rectifier
IRF7341GPBFPower MOSFET ( Transistor )International Rectifier
International Rectifier
IRF7341PBFHEXFET Power MOSFETInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar