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PDF IRF7309 Data sheet ( Hoja de datos )
| Número de pieza | IRF7309 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7309 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1243B
IRF7309
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
N-Ch P-Ch
VDSS 30V -30V
RDS(on) 0.050Ω 0.10Ω
Description
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
10 Sec. Pulse Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Junction-to-Amb. (PCB Mount, steady state)**
Max.
N-Channel
P-Channel
4.7 -3.5
4.0 -3.0
3.2 -2.4
16 -12
1.4
0.011
± 20
6.9 -6.0
-55 to + 150
Units
A
A
A
A
W
W/°C
V
V/ns
°C
Min.
––––
Typ.
––––
Max.
90
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
147
1 page  
IRF7309
N-Channel
4.0
3.0
2.0
Fig 10a. Switching Time Test Circuit
1.0
0.0 A
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 9. Max. Drain Current Vs. Ambient Temp.
Fig 10b. Switching Time Waveforms
Fig 11a. Gate Charge Test Circuit
Fig 11b. Basic Gate Charge Waveform
100 VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
P-Channel
100
VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10 -4.5V
10
-4.5V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics, TJ = 25oC
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 13. Typical Output Characteristics,TJ = 150oC
151
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7309.PDF ] | |
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