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PDF IRF7307 Data sheet ( Hoja de datos )
| Número de pieza | IRF7307 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
PD - 9.1242B
IRF7307
HEXFET® Power MOSFET
N -C H AN N EL M O SF ET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CH ANNE L MOS FE T
Top View
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.050Ω 0.090Ω
S O -8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ,TSTG
Parameter
10 Sec. Pulse Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
5.7 -4.7
5.2 -4.3
4.1 -3.4
21 -17
2.0
0.016
± 12
5.0 -5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
8/25/97
1 page  
100 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
B OTTOM - 1.5 V
10
P-Channel
100 VGS
TOP - 7.5V
- 5. 0V
- 4. 0V
- 3. 5V
- 3. 0V
- 2. 5V
- 2. 0V
BOTTOM - 1. 5V
10
IRF7307
1
-1.5 V
0.1
0.01
20µ s P ULS E W IDTH
TJ = 25 °C
A
0.1 1 10 100
-V DS , Dra in-to-S ourc e Vo ltage ( V)
Fig 12. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 1 5 0 °C
10
1
VDS = -15V
2 0µ s P UL S E W ID TH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0A
-VG S , G a te -to -S ou rc e V olta ge (V )
Fig 14. Typical Transfer Characteristics
1500
1000
500
V GS = 0V,
f = 1MHz
C is s = C gs + C gd , Cd s S H O R T E D
C rss = C gd
C oss = Cd s + C gd
Ciss
Co ss
Crss
0A
1 10 100
-VD S , Drain- to -So urc e V oltage ( V)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
1
-1.5V
0.1
0.01
20µ s PUL SE W IDTH
TJ = 150°C
A
0.1 1
10 100
-VDS , D rain-to-S ourc e Voltage (V)
Fig 13. Typical Output Characteristics
2.0
ID = -3.6A
1.5
1.0
0.5
0.0
-60
VG S = -4 .5V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Tem perature (°C )
Fig 15. Normalized On-Resistance
Vs. Temperature
10
ID = -2.2A
VD S = -16 V
8
6
4
2
FO R TE ST CIRCUIT
SE E FIG URE 2 2
0A
0 5 10 15 20 25
Q G , Total G ate Charge ( nC)
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7307.PDF ] | |
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