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PDF IRF730 Data sheet ( Hoja de datos )
| Número de pieza | IRF730 | |
| Descripción | 5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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1. IRF730 transistor datasheet  Hay una vista previa y un enlace de descarga de IRF730 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Data Sheet
IRF730
July 1999 File Number 1580.5
5.5A, 400V, 1.000 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17414.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF730
TO-220AB
IRF730
NOTE: When ordering, use the entire part number.
Features
• 5.5A, 400V
• rDS(ON) = 1.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-232
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF730
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1500
1200
900
600
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
300 CRSS
0
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6 TJ = 25oC
4
TJ = 150oC
2
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
1
TJ = 25oC
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 5.5A
16
12
8
VDS = 320V
VDS = 200V
VDS = 80V
4
0 0 8 16 24 32 40
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-236
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF730.PDF ] | |
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