|
|
PDF IRF710 Data sheet ( Hoja de datos )
| Número de pieza | IRF710 | |
| Descripción | 2.0A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF710 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Data Sheet
IRF710
June 1999 File Number 2310.3
2.0A, 400V, 3.600 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17444.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF710
TO-220AB
IRF710
NOTE: When ordering, include the entire part number.
Features
• 2.0A, 400V
• rDS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-220
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF710
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS = CGD
COSS ≈ CDS + CGS
300
CISS
200
COSS
100 CRSS
0
12
5 10 2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.6
1.2
0.8
TJ = 25oC
TJ = 150oC
0.4
0
0 0.4 0.8 1.2 1.6 2.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10
PULSE DURATION = 80µs
5 DUTY CYCLE = 0.5% MAX
2
1
5 TJ = 150oC
2
0.1
5
TJ = 25oC
2
10-2
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 2.0A
16
VDS = 80V
12
VDS = 200V
8
VDS = 320V
4
0
0 3 6 9 12 15
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-224
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF710.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF710 | 2.0A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| IRF710 | N-Channel Power MOSFETs/ 2.25A/ 350-400V |  Fairchild Semiconductor |
| IRF710 | Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB |  New Jersey Semiconductor |
| IRF710 | Power MOSFET ( Transistor ) |  Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |