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Número de pieza | IRF6618 | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRF6618/IRF6618TR1
HEXFET® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
VDSS
30V
RDS(on) max
2.2mΩ@VGS = 10V
3.4mΩ@VGS = 4.5V
Qg
43 nC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MT DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃIAR Avalanche Current
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
fjParameter
Junction-to-Ambient
gJunction-to-Ambient
hJunction-to-Ambient
iJunction-to-Case
Junction-to-PCB Mounted
Notes through are on page 9
www.irf.com
Max.
30
±20
170
30
24
240
2.8
1.8
89
0.022
-40 to + 150
Typ.
–––
–––
Typ.
–––
12.5
20
–––
1.0
Max.
210
24
Max.
45
–––
–––
1.4
–––
Units
V
A
W
W/°C
°C
Units
mJ
A
Units
°C/W
1
11/3/04
1 page 6
ID = 30A
5
4
3 TJ = 125°C
2
TJ = 25°C
1
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRF6618/IRF6618TR1
900
800
TOP
ID
9.3A
700 11A
BOTTOM 24A
600
500
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD A
I AS
V(BR)DSS
tp
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 16. Switching Time Test Circuit
www.irf.com
Fig 17. Switching Time Waveforms
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRF6618.PDF ] |
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