DataSheet.es    


PDF IRF644NS Data sheet ( Hoja de datos )

Número de pieza IRF644NS
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRF644NS (archivo pdf) en la parte inferior de esta página.


Total 12 Páginas

No Preview Available ! IRF644NS Hoja de datos, Descripción, Manual

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free (only the TO-220AB
version is currently available in a
Deslecardi-pfrteieonconfiguration)
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Document Number: 91038
PD - 94859
IRF644NPbF
IRF644NS
IRF644NL
HEXFET® Power MOSFET
D VDSS = 250V
RDS(on) = 240m
G
ID = 14A
S
TO-220AB
IRF644NPbF
D2Pak
IRF644NS
TO-262
IRF644NL
Max.
14
9.9
56
150
1.0
± 20
180†
8.4
15
7.9
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
12/2/03
www.vishay.com
1

1 page




IRF644NS pdf
IRF644NPbF/644NSPbF/644NLPbF
15
12
9
6
3
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
t2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
Document Number: 91038
www.vishay.com
5

5 Page





IRF644NS arduino
IRF644NPbF/644NSPbF/644NLPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 5.0µH
RG = 25, IAS = 8.4A. (See Figure 12)
ƒ ISD 8.4A, di/dt 378A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
… This is a typical value at device destruction
and represents operation outside rated
limits.
† This is a calculated value limited to TJ = 175°C .
‡ This is only applied to TO-220AB package.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint & soldering techniques refer to
application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the (IRF644NPbF) automotive [Q101]
& (IRF644NS/L) industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
12/03
Document Number: 91038
www.vishay.com
11

11 Page







PáginasTotal 12 Páginas
PDF Descargar[ Datasheet IRF644NS.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF644NPower MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)International Rectifier
International Rectifier
IRF644NPower MOSFET ( Transistor )Vishay
Vishay
IRF644NLPower MOSFET ( Transistor )International Rectifier
International Rectifier
IRF644NLPower MOSFET ( Transistor )Vishay
Vishay

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar