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PDF IRF640FP Data sheet ( Hoja de datos )
| Número de pieza | IRF640FP | |
| Descripción | N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF640FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IRF640
® IRF640FP
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
IRF640
IRF640FP
200 V
200 V
< 0.18 Ω
< 0.18 Ω
18 A
18 A
s TYPICAL RDS(on) = 0.150 Ω
s EXTREMELY HIGH dV/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
3
2
1
TO-220
3
2
1
TO-220FP
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
Value
Un it
IRF640
I RF 640F P
V DS
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gat e Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
200
200
± 20
18 18(**)
11 11(**)
72 72
125 40
1.0 0.32
V
V
V
A
A
A
W
W /o C
dv/dt(1) Peak Diode Recovery voltage slope
5 5 V/ns
VISO I nsulat ion Wit hstand Voltage (DC)
2000
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed
V
oC
oC
October 1999
1/9
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
IRF640/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF640FP.PDF ] | |
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